In this thesis, we present a new Poly - Si TFT process method to overcome Self - heating effect and Floating body effect. The main drawback of a conventional Poly - Si TFT is the existence of self - heating effect and floating body effect. The self - heating effect leads to drain current reduced and the floating body effect leads to premature device breakdown and kink effects. Here, we utilize all kinds of different isolation technologies to form non - continuing buried layer. Between the non - continuing buried layer there are pass ways, which contact the active region and the substrate directly. Because of conventional LOCOS isolation technology has longer bird¡¦s beak, the familiar method of SILO and PBL isolation technologies are used to reduce bird¡¦s beak. Also, we use STI isolation technology to build up non - continuing buried layer, which can control the width of pass way more easily. It is proved from
the measurement that the pass way can slow down the self - heating effect and the floating body effect successfully.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0731106-164424 |
| Date | 31 July 2006 |
| Creators | Wu, Chu-Lun |
| Contributors | Jumes B. Kuo, Shu - Fen Hu, Albert Chin, Chia-Hsiung Kao, Jyi-Tsong Lin, Yao -Tsung Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731106-164424 |
| Rights | withheld, Copyright information available at source archive |
Page generated in 0.0026 seconds