The study aims at growing nonpolar GaN film on LiGaO2 substrate by chemical vapor deposition (CVD). Metallic gallium and NH3 are the sources of Ga and N. There are two sets of experiment: add NH3 when raising the temperature, and set different reacting pressure at each experiment; add N2 when raising the temperature, and set different reacting temperature at each experiment, while reach the reacting temperature add NH3.
Analyze the reacted samples with X-ray diffraction, scanning electron microscope, electron back-scattered diffraction, atomic force microscope and transmission electron microscopy to know the growing direction, morphology, roughness, optical property, and the microstructure of GaN growing situation.
Under the experimental conditions, add NH3 when raising the temperature and set the reacting pressure in the range of 50 torr ~ 400 torr at 950¢XC with NH3 flow rate 450sccm for 60 minutes, m-plane GaN can be obtained; setting different reacting temperature(900¢XC ~ 1000¢XC) at 50 torr with N2/NH3 flow rate 450/30sccm for 60 minutes can also get m-plane GaN. Besides, the thin film of pure m-plane GaN can be obtained when setting the reacting temperature at 1000¢XC, but the film peels off seriously.
After reacting under the conditions of the first set experiments, the inside LGO substrate become damaged, pores can be observed easily; and the circumstances of LGO is better in second set experiment.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0808110-015805 |
| Date | 08 August 2010 |
| Creators | Yang, Wen-ting |
| Contributors | none, none, none, none, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-015805 |
| Rights | not_available, Copyright information available at source archive |
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