We present the fabrication of InGaAsP/InP buried heterostructure spot-size converter lasers. In the lateral conversion, we use photolithography to make tapered ridge waveguides. In the vertical conversion, we use a pair of step-index passive waveguides, namely guard waveguides (GWs), in the two sides of the step-index active waveguide region to increase optical-field profile. In order to decrease leakage current, we use a p-n-p current blocking structure by MOCVD regrowth. From numerical simulations, the far-field divergence is 21x21.
The step-index GW structure shows an internal efficiency of 63%. However, the BH lasers did not lase from our fabrication processes. From the I-V characteristics, a large leakage current has bypassed through the blocking structure. The reason may relate to the high background doping concentration of our MOCVD growth.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0811100-151054 |
| Date | 11 August 2000 |
| Creators | Wu, Tsung-Hsien |
| Contributors | Wood-Hai Cheng, Tsong-Sheng Lay, Tien-Tsung Shih, Szu-Chun Wang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0811100-151054 |
| Rights | not_available, Copyright information available at source archive |
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