The highly c-axis oriented ZnO films were deposited on silicon substrates by reactive RF magnetron sputtering in this study. The optimal two-step deposition parameters for ZnO films, which are oxygen concentrations of 70 % (1st step) and 50 % (2nd step), RF power of 100 W and sputtering pressure of 25 mTorr, are obtained by means of XRD, SEM and AFM analysis. Al films are deposited under optimal deposition parameters, which are DC power of 100 W and sputtering pressure of 4 mTorr, to form IDT electrodes with low sheet resistances. Therefore, Al/ZnO/Si layered SAW devices were fabricated under these optimized manufacturing parameters.
An oscillator based on a Al/ZnO/Si layered SAW device was fabricated for the application of UV detection and then investigating the acoustoelectric effect between surface acoustic wave and ultraviolet light illumination. Due to the fact that the sensor sensitivity is directly proportional to the resonance frequency, in this study the SAW device with high resonance frequency of Sezawa mode is adopted to form SAW oscillator for high sensitivity. The resonance frequency of SAW oscillator is 751.41 MHz. The optimal detecting zone for UV light is the center of IDT electrode with maximum sensitivity of 8.12 ppm/(£gW/cm2).
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0815108-162914 |
| Date | 15 August 2008 |
| Creators | Cheng, Po-Shu |
| Contributors | C. J. Huang, Cheng-Fu Yang, S. J. Chang, Mau-Phon Houng, Ying-Chung Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0815108-162914 |
| Rights | not_available, Copyright information available at source archive |
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