M-plane non-polar GaN grown on different substrates are
analyzed and compared in this thesis. The crystal quality,
morphology and spectra of the m-plane non-polar GaN are
measured by field-emission electron microscopy (FESEM), high
resolution X-ray diffraction (HRXRD), electron back-scatter
diffraction (EBSD), and Cathodoluminescence (CL). The
temperature dependent and acceleration voltage dependent CL
spectra are compared with transmission electron microscopy
(TEM) image to understand the concern of CL spectra and
dislocation.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0816110-172617 |
| Date | 16 August 2010 |
| Creators | Lee, Dong-Lin |
| Contributors | Min-Hsiung Tsai, Li-Wei Tu, Yung-Sung Chen, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0816110-172617 |
| Rights | not_available, Copyright information available at source archive |
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