In this article, we report the study of defects between single and bulk GaN nanorods in temperature dependence. High quality of GaN nanorods have been investigated by £g-photoluminescence. Optical properties and surface morphology have been analyzed by a series of measurements, including field-emission electron microscopy (FESEM), and cathodoluminescence (CL). CL data reveal that the intensity of surface state emission is larger than near-band-edge emission at 20K . The 3.21eV peak reveals the structural defect at GaN/Si interface. The surface state emission from bottom is larger than top.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0819110-150937 |
| Date | 19 August 2010 |
| Creators | Lee, Guan-Hua |
| Contributors | Yung-Sung Chen, Li-Wei Tu, Min-Hsiung Tsai, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0819110-150937 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0019 seconds