In this research, X-ray Diffraction is used to detect the existence of the In metal signal of the Indium Nitride (InN) through the analysis of two samples grown from the plasma-assisted molecular beam epitaxy (PAMBE). Sample A was grown on the Al2O3(0001) substrate with Gallium Nitride as a buffer layer, while Sample B was grown directly on the Si(111) substrate. Through X-ray Diffraction, we discovered the In(101) signal on Sample A and the InN(10-11) signal on Sample B. However, the two peaks of both signals were so close that it was difficult to differentiate them. Besides, the scanning electron microscope failed to show the existence of the In metal on the surface of both InN samples. Therefore, the high temperature XRD was employed to identify the true signal based on the different melting points between InN and In. Further, an acid etching method was also applied to recognize the existence of the In metal on the surface of the sample.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0822107-215623 |
| Date | 22 August 2007 |
| Creators | Hsu, Ming-zheng |
| Contributors | Li-wei Tu, Quark Chen, Dong-po Wang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0822107-215623 |
| Rights | not_available, Copyright information available at source archive |
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