The usual way to remove the silicon layer is used by the solutions of HF and KOH to conduct the etching process, but those chemicals are dangerous for the humans. Therefore, this study proposes the method that uses the diamond millstone to reduce the thickness of the silicon wafer. It hopes that this method can effectively shorten the process time and reduce the amount of chemical pollution.
Firstly, the effects of the working pressure, the rotating speed of the wafer, and the diamond millstone on the removing rate of silicon wafer are investigated. Then, the effect of the working pressure on the flatness of the wafer surface is investigated. Finally, the effect of the rotating speed ratio of the wafer to the diamond millstone on the track type of grinding surface is theoretically analyzed.
According to the experimental results, the removing rate of silicon wafer is almost linearly proportional to the working pressure, the rotating speed of the wafer, and the diamond millstone. The lighter working pressure, the more flatness of the wafer is.
According to the theoretical results, the rotating speed ratio of the wafer to the diamond millstone influences the track type of grinding surface. When this rotating speed ratio is an irrational number, the distribution of grinding track becomes finer.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0823106-062229 |
| Date | 23 August 2006 |
| Creators | Lin, I-Hsuan |
| Contributors | Der-Min Tsay, Tai-Fa Young, Yuang-Cherng Chiou, Rong-Tsong Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0823106-062229 |
| Rights | unrestricted, Copyright information available at source archive |
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