This thesis will talk about the difference between c-plane and m-plane
GaN. We use C-V measurement and try to find the difference from C-V
result.
We use atomic layer deposit (ALD) to deposit Al2O3 no n-Si (111), p-Si
(111), c-GaN, m-GaN, c-InN and m-InN for making MOS structure. And
use 100 kHz to measure high frequency C-V and charge-voltage method
to measure quasi-static capacitance and leakage current. The process and
how the instrument work will present in article.
In Si (111) case, the flat-band voltage is far away from ideal value.
This tells us charge in oxide. Result of quasi-static method shows
interface state density is between 1011 cm-2¡DeV-1 to 1012 cm-2¡DeV-1. From
Ref. 13, SiO2-Si system with 1011 cm-2 interface trap charge density for
Si (111). We compare C-V carrier concentration with Hall carrier
concentration and find some difference. We put C-V result of experiment
and simulated with COX and Hall carrier concentration we measured.
In GaN case, here is deep depletion in C-V result. And quasi-static
result also shows deep depletion of GaN. This phenomenon means
generate time of hole of n-type GaN is very long. And we use light to
excite electron and hole and measure C-V for average surface density of
state. The density of stay of Al2O3/m-GaN and Al2O3/c-GaN system is
similar. Only appearance difference between Al2O3/m-GaN and
Al2O3/c-GaN is position of flat-ban voltage. flat-ban voltage of c-GaN is
more negative than m-GaN.
For InN, we see ¡§the middle is lower than edge¡¨ curve. Recently, few
group present complete C-V curve of InN. We can not sure whether we
can use typical way to analyze this data.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0826109-152747 |
| Date | 26 August 2009 |
| Creators | Lee, Jyun-sian |
| Contributors | Tsu-Chiang Yen, Min-Hsiung Tsai, L. W. Tu, Quark Yung-Sung Chan, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-152747 |
| Rights | not_available, Copyright information available at source archive |
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