This thesis focuses on combination of RITD (Resonant Inter-band Tunneling Diode) in MOS (Metal Oxide Semiconductor). Such new device gives architecture, applying to a latch theory and produces a stable, robust output working voltage. This output voltage can induce electric field to control drive current of said MOS. This design can guarantee high noise-defense, reduce power consumption, high speed switch and save space occupation.
When gate voltage has longer slew time, the generated current working point may shift seriously due to noise interference. Importing this new architecture can form latch-phenomenon to keep working point into two stable states robustly, so this design can improve noise-defense ability of MOS. Because the announced device has lower working point voltage, it can reduce power consumption. During switch phase, said RITD can provide high current density to bring low slew rate of a conventional MOS up, thus the high speed switch is reached. Finally, this design of proposed device in this thesis is stack-like shape, then it can cut down space occupation efficiently to match futuristic trend of product profile.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0827107-172116 |
| Date | 27 August 2007 |
| Creators | Hou, Chao-yu |
| Contributors | James-Bang Kuo, Ting-Chang Chang, Yao-Tsung Tsai, Jyi-Tsong Lin, Ming-Kwei Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0827107-172116 |
| Rights | not_available, Copyright information available at source archive |
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