The study focus on low temperature process with doping antimony to refine the quality of the CI(G)S thin film, and doping gallium to increase energy band gap in two-stage co-evaporation process. Furthermore, we discuss about the variety of crystal structure, and recognize the value of energy band gap in transmission spectra.
It has been achieved to increase the energy band gap of material with doping gallium. Recognizing the shift of XRD pattern and research result from papers, I estimate the content ratio of gallium in ¢»A atoms is 0.28~0.29, near my establishment ratio 0.3.
By tuning the molecular beam flux of antimony effusion cell from 1.1¡Ñ1013 atoms/cm2second to 2.2¡Ñ1014 atoms/cm2second , to find out the property content of antimony involving of co-evaporation to optimize the quality of the CI(G)S polycrystalline thin film. We just observed that the thin film with antimony involving make effect of smoother and denser surface morphology.
In our study, we also try discontinue supplying the antimony vapor to reduce the amount of antimony which involves the reaction process, and make low content of antimony leaved in the CI(G)S thin film. Here, We found out a special effect of the grain- growth of the CI(G)S thin film supplying antimony continually or not in the process. It should be strong (112) prefer orientation when we deposit the thin film using SLG substrate. However, we found out that antimony enhance the (220/204) .
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0827112-103851 |
| Date | 27 August 2012 |
| Creators | Liao, Yung-da |
| Contributors | Mau-phon Houng, Tsung-ming Tsai, Bae-heng Tseng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0827112-103851 |
| Rights | unrestricted, Copyright information available at source archive |
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