In this experiment, selenides are used as the precursor and CIGS thin films are synthesized through selenization. At the first stage, the precursor with the layers of In-Se/Ga-Se/Cu-Se failed to produce CIGS thin films when the temperature is going up 10¢J per minute to the target temperature during selenization and the change of the composition of the precursor, the temperature duration and the temperature of selenization is tried. Later, the reaction is successfully done when the layers are changed into In-Ga-Se/Cu-Se with the temperature going up 10¢J per minute to 550¢J, lasting for 5 minutes. With various Ga containments, I analyize the optical and electronic properties.
In order to see the composition of CIGS thin films in different propotion of Cu/In+Ga and Ga/In+Ga, I use EPMA and the properties of XRD peak shift with the containment of Ga to estimate the proportion of the containment of Ga. I found the conclusions by EPMA and XRD are very similar.
At 150¢J, the precursors Cu-Se, In-Se and Ga-Se are fabricated and XPS, Raman, XRD or else are used to speculate the bonding of them. In addition, using XRD and Raman to analyze In-Ga-Se/Cu-Se selenides, I found, between 150¢J and 300¢J, Cu2-xSe bonding is the main; at 350¢J, InSe bonding intensifies obviously; at 400¢J, CIGS is formed.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0827112-111910 |
| Date | 27 August 2012 |
| Creators | Hsieh, Yi-hsun |
| Contributors | Mau-Phon Houng, Tsung-ming Tsai, Bae-heng Tseng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0827112-111910 |
| Rights | user_define, Copyright information available at source archive |
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