This thesis proposes a new architecture, fabricating a pair of RITD (Resonant Interband Tunnel Diode) in the upper and lower position of drain and source terminals of a conventional MOS (Metal oxide Semiconductor), this design is completed by deposition, etching and spacer sequentially, manufacture process is a little complicate due to RITD implementation, but not difficult. This MOS based device, given to a pair of RITD in the upper and lower position of drain and source terminals, its equal model is like a conventional SRAM (Static Random Access Memory) which is completed by six MOS components at least, thus given advantages, like space occupation, cost consideration, still, due to high speed switch and low power consumption of RITD, this device also meet requirement of SRAM, because of different working mechanism, this device is more simple in interconnection and operation than that of a conventional SRAM, it is another improvement.
This thesis will exhibit the manufacture process of this device and its equal circuit mode and working explanation.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0830107-153451 |
| Date | 30 August 2007 |
| Creators | Song, Jian-hong |
| Contributors | James-Bang Kuo, Ting-Chang Chang, Yao-Tsung Tsai, Jyi-Tsong Lin, Ming-Kwei Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0830107-153451 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.022 seconds