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Extracting MOSFET Small Signal Equivalent Circuit and Substrate Parameters with Four Port De-embedding Method

Characteristics of small signal components for circuit designers are very important in circuit design. Many researchers have been working hard on removing the unwanted parasitic effects which is used to get the intrinsic characteristics of the small signal parameters.
In this thesis, we propose a novel four-port de-embedding procedure which based on two-port cascade structure de-embedding procedure and combined with metal and polysilicon ground-shielded technology, and let four terminals of MOSFET are connected individually to four signal pads. With such de-embedding procedure, the intrinsic and substrate element values of small-signal model are extracted by different bias.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0902109-105045
Date02 September 2009
CreatorsChen, Chun-chung
ContributorsKen-Huang Lin, Chih-Wen Kuo, Wen-Liang Li, Tzyy-Sheng Horng, Chie-In Lee
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902109-105045
Rightsnot_available, Copyright information available at source archive

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