This thesis is composed of three parts. The first part is devoted to introducing the various noise sources in transistors and their equivalent noise models. Based on the equivalent noise models, the theory of noise cancellation in a low-noise amplifier is derived in detail. The second part is to perform an experiment to validate the theory of low-noise amplifier using common-gate noise cancellation technique. By adjusting the transconductance of individual transistor, the simulated and measured noise figures are compared under different noise cancellation conditions. The third part is to design a low-noise amplifier RFIC using common-source noise cancellation technique for DVB-H applications. This RFIC was implemented in a TSMC 0.18£gm process and measured to show successful noise cancellation capability in a wide frequency range.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0908108-175223 |
| Date | 08 September 2008 |
| Creators | Hsu, Nien-tsu |
| Contributors | Sheng-Fuh Chang, Tzyy-Sheng Horng, Chie-In Lee, Huey-Ru Chuang, Jian-Ming Wu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0908108-175223 |
| Rights | unrestricted, Copyright information available at source archive |
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