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Impact of charge collection mechanisms on single event effects in SiGe HBT circuits

Thesis--Auburn University, 2009. / Abstract. Vita. Includes bibliographical references (p. 77-81).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/443239652
Date January 2009
CreatorsZhang, Tong, Niu, Guofu,
PublisherAuburn, Ala.,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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