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Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy

Thesis (Ph. D.)--School of Electrical and Computer Engineering, Georgia Institute of Technology, 2004. Directed by Gary S. May. / Includes bibliographical references (leaves 109-113).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/55647158
Date January 2004
CreatorsTriplett, Gregory Edward,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceAvailable online, Georgia Institute of Technology, 2004:

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