The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor deposition

Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/55942170
Date January 2003
CreatorsWong, Michael Ming.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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