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GaN growth by RF-plasma assisted molecular beam epitaxy determination of surface stoichiometry by RHEED-TRAXS, annealing of GaN:Be and the effects of active nitrogen species, surface polarity, and excess Ga-overpressure on high temperature limits /

Thesis (Ph. D.)--West Virginia University, 2005. / Title from document title page. Document formatted into pages; contains xi, 99 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 93-99).

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/60643494
Date January 1900
CreatorsVanMil, Brenda.
PublisherMorgantown, W. Va. : [West Virginia University Libraries],
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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