Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material, its Schottky contacts, P-N junctions and heterostructures

Description

Thesis (Ph. D.)--University of Hong Kong, 2005. / Title proper from title frame. Also available in printed format.

Links & Downloads

1. http://sunzi.lib.hku.hk/hkuto/record/B31559670

Tags

Gallium nitride. Semiconductors Epitaxy.

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/63520029
Date	January 2005
Creators	Huang, Yan
Source Sets	OCLC
Language	English
Detected Language	English
Source	Click to view the E-thesis via HKUTO