Return to search

Contamination aspects in integrating high dielectric constant and ferroelectric materials into CMOS processes

Erlangen, Nürnberg, Univ., Diss., 2002. / Computerdatei im Fernzugriff.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/637392337
Date January 1900
CreatorsBoubekeur, Hocine.
Publisher[S.l.] : [s.n.],
Source SetsOCLC
LanguageUndetermined
Detected LanguageEnglish

Page generated in 0.003 seconds