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On the mechanisms of hydrogen implantation induced silicon surface layer cleavage

Marburg, Univ., Diss., 2001.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/637429556
Date January 2001
CreatorsHöchbauer, Tobias.
Publisher[S.l.] : [s.n.],
Source SetsOCLC
LanguageUndetermined
Detected LanguageEnglish

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