Contamination aspects in integrating high dielectric constant and ferroelectric materials into CMOS processes

Description

Erlangen, Nürnberg, University, Diss., 2002.

Links & Downloads

1. http://deposit.ddb.de/cgi-bin/dokserv?idn=971989001
2. http://www.opus.ub.uni-erlangen.de/opus/volltexte/2004/12/pdf/Thesis.pdf
3. http://www.opus.ub.uni-erlangen.de/opus/volltexte/2004/12/index.html

Tags

FRAM <Informatik>

Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/76648839
Date	January 1900
Creators	Boubekeur, Hocine.
Publisher	[S.l. : s.n.,
Source Sets	OCLC
Language	English
Detected Language	English
Source	LF