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The effect of surface recombination velocity on the high level injection current - voltage characteristics of wide based silicon p-i-n diodes /

No description available.
Date January 1976
CreatorsStrong, Alvin Wayne
PublisherThe Ohio State University / OhioLINK
Source SetsOhiolink ETDs
Detected LanguageEnglish
Rightsunrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

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