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The effect of surface recombination velocity on the high level injection current - voltage characteristics of wide based silicon p-i-n diodes /

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Identiferoai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:osu148700538432704
Date January 1976
CreatorsStrong, Alvin Wayne
PublisherThe Ohio State University / OhioLINK
Source SetsOhiolink ETDs
LanguageEnglish
Detected LanguageEnglish
Typetext
Sourcehttp://rave.ohiolink.edu/etdc/view?acc_num=osu148700538432704
Rightsunrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.

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