<p> The purpose of this study is to design, fabricate and test a CMOS compatible 3-axis Hall effect sensor capable of detecting the earth’s magnetic field, with strength’s of ∼50 μT. Preliminary testing of N-well Van Der Pauw structures using strong neodymium magnets showed proof of concept for hall voltage sensing, however, poor geometry of the structures led to a high offset voltage. A 1-axis Hall effect sensor was designed, fabricated and tested with a sensitivity of 1.12x10<sup>-3</sup> mV/Gauss using the RIT metal gate PMOS process. Poor geometry and insufficient design produced an offset voltage of 0.1238 volts in the 1-axis design; prevented sensing of the earth’s magnetic field. The new design features improved geometry for sensing application, improved sensitivity and use the RIT sub-CMOS process. The completed 2-axis device showed an average sensitivity to large magnetic fields of 0.0258 μV/Gauss at 10 mA supply current.</p>
| Identifer | oai:union.ndltd.org:PROQUEST/oai:pqdtoai.proquest.com:10003075 |
| Date | 03 February 2016 |
| Creators | Locke, Joshua R. |
| Publisher | Rochester Institute of Technology |
| Source Sets | ProQuest.com |
| Language | English |
| Detected Language | English |
| Type | thesis |
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