Fabrication and Characterization of PZT Thin Films Ultrasonic Sensor with Matching Layer / 水下鋯鈦酸鉛薄膜式超音波元件匹配層製作研究

碩士 / 國立臺灣海洋大學 / 電機工程學系 / 92 / The main object of this thesis concentrates on the research of PZT thin film ultrasonic sensors and the characterization of matching layer based on the implementation of PZT thin film ultrasonic sensors between sensors and water
LNO and PZT are both prepared by the ratio frequency magnetron sputter system. During suitable annealing process, both of LNO and PZT exhibited the highly (110)-oriented pervoskite structure. The crystalline of LNO film and PZT film are analyzed by the XRD, the surface morphology and cross-section are analyzed by the SEM. The best fabrication condition for prepare the LNO bottom electrode can obtain the 25Ω-cm resistivity. Using different parameters to prepare the PZT thin film on LNO thin film. The best fabrication conditions obtain PZT thin film, the property of dielectric constant, 1468, dielectric loss, 0.26 at 1kHz, remnant polarization about 25.23μC/cm2, coercive field about 41.67kV/cm, piezoelectric constant d33 is about 193 pC/N, d31 is -101pC/N.
After the implementation of the PZT thin film sensor, various matching layers were coated on the sensor. The changes of sensitivity and bandwidth with PZT thin film adding matching layer underwater is study in this experiment. The PZT thin film sensor could obtain the best characterization when the sensor was coated the photoresist matching layer. The bandwidth is about 5.25MHz, and the sensitivity is about 200mV in this experiment.

Identiferoai:union.ndltd.org:TW/092NTOU5442053
Date January 2004
CreatorsChia-Yuan Chang, 張家源
ContributorsChung-Cheng Chang, 張忠誠
Source SetsNational Digital Library of Theses and Dissertations in Taiwan
Languagezh-TW
Detected LanguageEnglish
Type學位論文 ; thesis
Format85

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