碩士 / 國立臺灣大學 / 電子工程學研究所 / 95 / This thesis reports an analysis of DC and AC behavior of Tri-Gate Fin-FET (Field Effect Transistor) device.
In chapter 1, we make an introduction for Fin-FET and describe its evolution from conventional MOS device and propose a structure called Tri-Gate Fin-FET device.
In chapter 2, we discuss the DC phenomenon of a 100nm Tri-Gate Fin-FET device with the N+ poly gate in different fin width, height, and doping.
In chapter 3, we discuss the capacitance phenomenon of a 100nm Tri-Gate Fin-FET device with the N+ poly gate in different fin width, height, and doping.
| Identifer | oai:union.ndltd.org:TW/095NTU05428026 |
| Date | January 2006 |
| Creators | Bo-Han Hsieh, 謝泊含 |
| Contributors | James-B Kuo, 郭正邦 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 35 |
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