碩士 / 國立成功大學 / 化學工程學系碩博士班 / 100 / We use doping different ions into gallium oxide for forming different photocatalysts. We get GaON by doping nitrogen and CuGaO2 by doping copper(I). From the UV-vis absorption, different photocatalysts have different bandgaps. By electrochemical analysis, we can know no matter nitrogen or copper(I) doping all help valence band shifts to negative electric potential and conduction band shifts to positive electric potential. The band position of conduction band can be suitable for reducing water and the band position of valence band can be suitable for oxidizing water. The bandgap of GaON is smaller than the bandgap of CuGaO2, so the GaON can absorb longer wavelength. When the absorption efficiency increases, the activity of semiconductor will increase.
We find GaON loading Rh-Cr mixed oxide can get better result than commercial WO3 loading RuO2. In the future, we will use the GaON in Z-Scheme system as oxygen production catalyst. We hope it can get a better overall water splitting.
| Identifer | oai:union.ndltd.org:TW/100NCKU5063096 |
| Date | January 2012 |
| Creators | Cheng-DaTsai, 蔡承達 |
| Contributors | Hsi-Sheng Teng, 鄧熙聖 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 97 |
Page generated in 0.0017 seconds