碩士 / 明新科技大學 / 電子工程研究所 / 102 / Semiconductor industry is overwhelmingly successful and progressive, especially from 0.1 micron devices to 20 nanometers devices. The scale decreasing of transistors results in the density of transistors such that it does not only lower the production cost but also reduce the consuming power. For channel length less than 40nm, FinFET devices become the mainstream because of even better controllability. FinFET uses 3-dimensional fin-like channel with the aspect-ratio of the fin as high as 50:1. It successfully eliminates high leakage current at such a short channel length by applying a bias to the gate and then depleting the whole fin standing on the insulator (silicon dioxide, known as silicon on insulator or SOI). One thus measures the fabricated FinFET devices, analyzes current-voltage curves, and deliberately fits the curves to find the underlying physical quantities.
Furthermore, automatic control system using 8051 CPU is put to simulating. One tries built up a carbon dioxide sensor to sense the concentration of carbon dioxide, in which the analog signal is sent to the ADC0804 and converted into the digital signal. As the criteria of the digital signal are reached, the system sends out the power to protect the circumstances from being with such a high concentration of carbon dioxide.
| Identifer | oai:union.ndltd.org:TW/102MHIT0686021 |
| Date | January 2014 |
| Creators | Cheng-Yu Tsai, 蔡承育 |
| Contributors | Hsin-Chia Yang, 楊信佳 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 68 |
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