碩士 / 明新科技大學 / 電子工程研究所 / 102 / CMOSFET devices of 18 nanometers have been manufactured by using FinFET structure to achieve higher speeds of transferring signals and, in the mean time, to lower the consuming power. FinFET has gained the reputation because of its less leaky fin-like channel and higher controllability with elimination of body such that the whole channel is thus depleted as the gate is biased. One is intrigued in how the measured ID-VD curves fit the conventional parameterized ID-VD model, in which many physical quantities are even revealed.
On the other hand, one of the CMOS applications is concerning automatic control system, in which 8051 CPU is proposed to deal with the digital signals coming from the sensor and, therefore, send commands. For example, the temperature sensor senses the temperature of the circumstance and there appears the analog voltage, which is converted into digital signal via ADC0804. The criteria set in the program helps to determine when to execute the consecutive actions.
| Identifer | oai:union.ndltd.org:TW/102MHIT0686027 |
| Date | January 2014 |
| Creators | Ko-Fan,Liao, 廖珂汎 |
| Contributors | Hsin-Chia,Yang, 楊信佳 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 58 |
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