碩士 / 明新科技大學 / 電子工程系碩士班 / 103 / It shall be the must to shrink the sizes of electronics devices in the Integrated Circuit Industry, which uses silicon or semiconductor as substrate. As the sizes get shrunk, the manufacture cost will be tremendously lowered and thus be competitive. Nevertheless, the quantum effects become apparent such that the devices confront issues, such as large Ioff. This leakage current is too large to satisfy the requirement of controllability. Conventional MOSFET is mandatorily replaced by FinFET, which is 3-D structural. The fin of FinFET, treated as a channel, partly gets strongly inversed within 10nm or 20nm, and the rest is wholly depleted as Gate polysilicon is applied with a bias. There forms a barrier to protect the device from being leaky. This device standing on insulator (silicon on insulator, SOI) is thus fully controllable and promising. One uses a technique fitting the current-voltage characteristics curves to abstract meaningful parameters, where many electrical characteristics and performances will be explored through these associated values.
In addition, Radio Frequency Integrated Circuit includes many components as a system, where the components are closely working together to accomplish the decoding and encoding functions. The signals are transmitted or received from one another. The impedance matching is mandatorily required among all the components. One specifically focuses on the impedance matching using advanced design system (ADS) by Agilent and tries to observe the correlation associated with inductor and capacitor in series or in parallel.
| Identifer | oai:union.ndltd.org:TW/102MHIT0686038 |
| Date | January 2015 |
| Creators | You-Liang Ju, 朱祐良 |
| Contributors | Hsin-Chia Yang, 楊信加 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 66 |
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