碩士 / 國立清華大學 / 電子工程研究所 / 103 / Recently ,due to the rapidly developing of commercial electronics, the demands of fast and mass storage devices increase. Flash memory dominates the market of nonvolatile memory. However with the technology scaling down, flash memory come up with many challenge, such as inadequate charge storage, high operation voltage and physical limit, which urges the study of novel nonvolatile memory. In which, RRAM is the most promising candidate for the next generation.
In this studies, we propose a novel FINFET Dielectric (FIND) RRAM, which is fully compatible with FinFET CMOS logic process without extra mask or additional process flow. The cell size of the FIND RRAM is only 0.07632μm2, which is highly competitive. The electrical analysis shows low operation voltage and short switching time. Moreover, excellent set/reset disturb immunity and data retention at 150oC for 1000 hours further prove its superior reliability.
In this dissertation, a highly dense 1kb NOR-type FIND RRAM array is successfully demonstrated.. Without the requirement of extra masks, this cell featuring fast operation speed, extremely small and outstanding reliability and scalability is one of the promising solutions for nonvolatile memory in the near future.
| Identifer | oai:union.ndltd.org:TW/103NTHU5428031 |
| Date | January 2015 |
| Creators | Pan, Hsin Wei, 潘信瑋 |
| Contributors | Lin, Chrong Jung, 林崇榮 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 54 |
Page generated in 0.0012 seconds