碩士 / 國立清華大學 / 工程與系統科學系 / 103 / With the development of Moore's Law, short channel effect (SCE) has been always a serious issue for CMOS technology. This study, we describe the fabrication of a trench junctionless poly-Si fin field-effect transistor (trench JL-FET) to further improve short channel effect. This trench JL Fin-FET enhances the gate control over its silicon channel. The trench JL Fin-FET can easily to form the ultra-thin channel thickness (TCH) and control the gate length (LG) by dry etching. And, having the heavily doping channel and source/drain (S/D) regions, the SCE in JL-FET can be suppressed. Even if JL-FET requires the ultra-thin channel thickness to lead to the fully-depletion condition that would make the JL-FET turns off, the trench structure can easily integrated into the JL-FET device.
In the past, if we want to manufacture ultra-thin channel usually directly depositing the thin-film as the poly-Si channel. And now we use the dry etching to form the ultra-thin channel in JL FETs and it could get larger grain size and less grain boundary than directly depositing the thin-film.
In this study of characteristics analysis, the trench JL-FET has superior SS value about 111 mV dec-1, high ION/IOFF ratio up to 108 and practically negligible DIBL value. Trench JL Fin-FET with gated raised source/drain relieves drain-induced barrier lowering (DIBL) effect and channel length modulation effect. In addition, at a high voltage operation (over flat-band voltage of JL device), trench JL Fin-FET with gated raised source/drain reveals a low parasitic S/D resistance due to the formation of an accumulation layer at S/D, which is suit for multi-gate-oxide applications. Importantly, this trench JL Fin-FET along with simple fabrication is highly favorable for advanced system-on-chip (SOC), low power consumption applications and three-dimensional (3-D) stacked ICs applications.
| Identifer | oai:union.ndltd.org:TW/103NTHU5593033 |
| Date | January 2015 |
| Creators | Lin, Ko Wei, 林个惟 |
| Contributors | Wu, YungChun, 吳永俊 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 73 |
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