碩士 / 國立臺灣師範大學 / 光電科技研究所 / 103 / The enhancement performance of steep swing may reduce power consumption and be a candidate of next generation technology node in CMOS industry.In this work, the superior subthreshold swing is obtained by NC effect with dielectric CET=0.98nm, which the combination of HfOX/ZrOX was used.
The self-aligned fin-shaped TFET without space between gate and source/drain is demonstrated successfully, and the fabrication process using all i-line photolithograph stepper without e-beam writer. The high ON current (> 10A) is obtained and indicates the benefit of self-alignment process. The proposed fin-shaped TFET process leads the opportunity of the advanced devices fabrication by 6-inch process with i-line photolithograph stepper.
| Identifer | oai:union.ndltd.org:TW/103NTNU5614012 |
| Date | January 2015 |
| Creators | Cheng, Chih-Ching, 鄭智璟 |
| Contributors | Lee, Min-Hung, 李敏鴻 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 54 |
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