碩士 / 國立高雄大學 / 電機工程學系碩士班 / 103 / With the scaling of device, FinFET has considered as one of the most promising options for future devices to replace planner MOSFETs. N-type tri-gate FinFETs were utilized in this work. The FinFET devices with various TaN thicknesses were used at first to study the influence on electric characteristics and reliability. It could be observed that the thick TaN device shows the larger threshold voltage, drain saturation current and better subthreshold swing for the flash device. After hot carrier injection, it could be found that the thicker TaN device shows larger subthreshold swing increasing and mobility degradation but the smaller VTH variation. It meant that the interface defect dominates the degeneration. The degeneration of the thinner TaN device is due to the oxide traps. The devices with various fin numbers were also studied in this work. We found that the 40-fin device shows the better characteristic for the flash device. After hot carrier injection, the 40-fin device shows the smaller variations on VTH, subthreshold swing and drain current degradation than the 1-fin device. It indicates that the degradation was induced less by interface defect charges.
| Identifer | oai:union.ndltd.org:TW/103NUK05442009 |
| Date | January 2015 |
| Creators | Ying-ya Chen, 陳映雅 |
| Contributors | Wen-kuan Yeh, 葉文冠 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 72 |
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