碩士 / 國立高雄大學 / 電機工程學系--先進電子構裝技術產業研發碩士專班 / 103 / In order to achieve favorable performances and reliability of device, the 3D-structure FinFET has been considered as one of the most promising options for future devices to replace planar MOSFETs. In this work, it is found that the thinner gate electrode device shows better performance than the thicker one. After NBTI stress, thicker gate electrode device shows the more serious electric degeneration. The phenomenon could be explained by R-D model. The time power law exponent shows that thicker and thinner gate electrode device release same H species away from the interface in the cases of different gate voltages. However, the thicker gate electrode device shows the serious degeneration than the thinner one, and the thinner gate electrode device performs the better reliability.
| Identifer | oai:union.ndltd.org:TW/103NUK05442033 |
| Date | January 2015 |
| Creators | Shao-an Chen, 陳劭安 |
| Contributors | Wen-Kuan Yeh, 葉文冠 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 74 |
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