碩士 / 國立高雄大學 / 電機工程學系碩士班 / 103 / This thesis studies the effects of external stresses and back bias modulation for FinFETs and ultra-thin-body and box silicon-on-insulator (UTBB SOI) FEFs. The results show that UTBB SOI has larger threshold voltage and transconductance modulation compared to SOI FinFETs probably because of low body series resistance within UTBB SOI. The phenomenon to enforce tensile/compressive stresses on n type FinFETs enhance/degrade their transconductance meet the theory of piezoresistance coefficients of [110] orientation silicon. This suggests that the strain engineering can be also applied on 3D FETs, such as FinFETs.
| Identifer | oai:union.ndltd.org:TW/103NUK05442036 |
| Date | January 2015 |
| Creators | Cheng-Ting Shih, 施政廷 |
| Contributors | Wen-Teng Chang, 張文騰 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 74 |
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