碩士 / 國立高雄大學 / 電機工程學系碩士班 / 103 / This thesis addresses the characteristics of nFinFETs with different channel width, extended width with increasing of fin and with wire bonding connection. The measurements show that the nFinFET with thicker width has higher current than thinner ones, and even higher current density per effective width (Weff). The single-fin structure exhibits higher current density than multi-fins structure. The wire bonding nFinFETs shows higher transconductance and current than the inbounded nFinFETs.
The nFinFETs degrades more severely for smaller width under positive bias temperature instability test. Probably due to a stronger electrical field, which brings about more defects. The multi-fins device degrades less than single-fin device. Because the coupling effect on the multi-fins structure. The coupling electrical field in the multi-fins structure is less than single-fin structure that reduces degradation of multi-fins device. We suspect that the bounded nFinFETs generate additional parasitic effect and defects due to wire connection, worsening the reliability.
| Identifer | oai:union.ndltd.org:TW/103NUK05442037 |
| Date | January 2015 |
| Creators | Yu-Yen Ho, 何俞彥 |
| Contributors | Wen-Teng Chang, 張文騰 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 72 |
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