碩士 / 國立中興大學 / 電機工程學系所 / 104 / The stress distribution and magnitude of 3D FinFET cause by each process steps is studied in this work. SolidWorks is first applied to drawing the 3D FinFET structural diagram , and then , the ANSYS stress analysis simulator is utilized for simulating each process steps generating stress , Sentaurus TCAD and second order piezoresistance model are used for calculating the mobility change in stress.
| Identifer | oai:union.ndltd.org:TW/104NCHU5441025 |
| Date | January 2016 |
| Creators | Shuen-Yi Keng, 耿順一 |
| Contributors | Shu-Tong Chang, Chang-Chun Lee,, 張書通, 李昌駿 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 59 |
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