碩士 / 國立高雄師範大學 / 電子工程學系 / 104 / In this work, hot carrier effect (HCE) was used to study the reliability of n-channel FinFET devices. We compared the effect of reliability with different fin numbers. Power law analysis was used to distinguish the bulk trap from Positive Bias Temperature Instability (PBTI) and the impact ionization from intrinsic Hot Carrier Effect (intrinsic HC). Finally, we analyzed the degradation of devices from parameters of electrical property.
From the experimental results, the multi-fins devices show better reliability than the single-fin device after stress. The multi-fins devices obviously reduce the effect of Drain-Induced Barrier Lowering (DIBL). It is suggested that there existed a coupling effect between the fins for the multi-fins structures. Therefore, the device degradation was improved with fin number increasing. On the other hand, with the increase of lateral electric field, the traps generated by intrinsic Hot Carrier Effect dominate the threshold voltage shift and the power law exponents.
| Identifer | oai:union.ndltd.org:TW/104NKNU0428002 |
| Date | January 2016 |
| Creators | WANG,TZUO-LI, 王佐禮 |
| Contributors | YANG,YI-LIN, 楊宜霖 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 87 |
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