Improvement of Contact Resistance and Leakage Current for FinFETs by Adopting Ge Pre-Amorphization Implantation / 利用鍺進行預非晶化佈植改善鰭式電晶體之接觸電阻與漏電流

Description

碩士 / 國立清華大學 / 工程與系統科學系 / 104 / 因申請專利緣故，資料延後公開

Links & Downloads

1. http://ndltd.ncl.edu.tw/handle/92197321391993049667

Additional Fields

Identifer	oai:union.ndltd.org:TW/104NTHU5593067
Date	January 2016
Creators	Chen, Chin Yu, 陳慶育
Contributors	Wu, Yung Hsien, 巫勇賢
Source Sets	National Digital Library of Theses and Dissertations in Taiwan
Language	zh-TW
Detected Language	English
Type	學位論文 ; thesis
Format	87