碩士 / 國立高雄大學 / 電機工程學系碩士班 / 104 / This thesis studies the effects of mechanical stresses on [110] and [100] orientated channel and degradation of positive bias temperature instability (PBTI) on nFinFETs. The results show that [100] orientated devices have smaller drain current and transconductance compared to channel direction [100] devices, but have less degradation under PBTI test, even the same drain current and transconductance degradation with per effective width (Weff). The devices with [100] channel have lower electric mobility than that with [110] channel probably because of a lower Si atom density on [110] surface, which thus generates lower interface degradation and lower dielectric defect. The mechanically tensile and compressive stresses on nFinFETs enhance and degrade their transconductance, respectively, meeting the piezoresistance coefficients of [100] and [110] silicon.
| Identifer | oai:union.ndltd.org:TW/104NUK00442012 |
| Date | January 2016 |
| Creators | LIN, SHIH-WEI, 林士瑋 |
| Contributors | CHANG, WEN-TENG, 張文騰 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 55 |
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