碩士 / 中華大學 / 電機工程學系 / 107 / Due to the scaling of transistor process, the density of integrated circuits is increasing. However, when the technology node reaches the current channel length of sub-10 nm, many technical issues occur, such as short channel effect and leakage current. Because of the size of the device, the problem of doping uniformity caused by impurity diffusion cannot be ignored. The junctionless transistor could overcome these issues. The junctionless transistor has a highly doped channel containing the same concentration with drain and source. Therefore, there is no junction between the channel and the drain/source.
However, due to the large number of carriers in the junctionless transistor, the carrier in the channel is repelled by the electric field of the gate to form complete depletion of the channel when the transistor is turned off. And the depletion layer also has capacitive effect, causing the trsnsistor more difficult to be turned off. The average sub- threshold swing of a typical junctionless transistor is usually higher than that of an enhanced mode transistor, reflecting the difficulty of closing the transistor. Therefore, there are some new technologies introduced to solve the issue of junctionless transistors. One of them is the shell-doping technology. The doping of the channel in this technology is limited to the channel surface by the molecular layer doping technology, which can improve the controllability of the gate and also suppress sub-threshold swing degradation.
However, although the shell-doping technique can increase the on/off current ratio and reduce the sub-threshold swing, there are still no studies about its reliability. Due to its thin doping layer channel on the surface, it may be interesting to study the reliability of shell-doping device.
This study compares the performance of the traditional junctionless FinFET with the shell-doped junctionless FinFET in terms of hot carrier stress, especially whether the shell-doped junctionless FinFET will appear more interface degradation. Shell-doped junctionless FinFET will appear two phenomena of degradation: oxide layer charge injection degradation and interface degradation after hot carrier stress. On the other hand, the carriers of a traditional junctionless FinFET flows at a deeper position of the channel, so that interface degradation is less likely to occur or less affected even if interface degradation occurs. It will appear interface degradation only with serious hot carrier injection.
| Identifer | oai:union.ndltd.org:TW/105CHPI0442036 |
| Date | January 2018 |
| Creators | KAO, CHENG TA, 高正達 |
| Contributors | LAI, CHIUNG-HUI, LEE, YAO-JEN, 賴瓊惠, 李耀仁 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 50 |
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