碩士 / 逢甲大學 / 電子工程學系 / 105 / The thesis investigates Al2O3-dielectric InAlN/AlN/GaN metal-oxide-semiconductor heterostructure Field-effect transistors (MOS-HFETs) with planar structure and FinFET structure by using the ultrasonic spray pyrolysis deposition (USPD) technique, and evaporating high thermal conductivity after etching substrate improve the substrate heating-dissipation to solve the self-heating effect when biased at high voltage. Due to the enhanced gate control, the DC characteristic of device has been effectively improved. Depositing the high-k aluminum dioxide as a gate-dielectric layer, the gate leakage reduced by gate insulation and surface passivation.
Providing the comparison of the characteristics, In this thesis, schottky-gate planar-HFET, MOS planar-HFET, schottky-gate fin-HFET, and MOS Fin-HFET have been achieved, including maximum drain-source saturation current density (IDS, max) of 857 mA/mm,1077 mA/mm,1414 mA/mm, and 1655 mA/mm, drain-source current density at VGS = 0 V (IDSS0) of 664mA/mm, 895mA/mm, 958 mA/mm, and1137 mA/mm, maximum extrinsic transconductance (gm, max) of 189 mS/mm, 160 mS/mm, 325 mS/mm, and 284 mS/mm, reduced gate leakage current (Ig) at VGS = -50 V of 1.4×10-2 mA/mm, 1.1×10-6 mA/mm, 9.6×10-4 mA/mm, and 9.1×10-7 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -174 V, -191 V, -175 V, and -199 V, respectively, at 300 K. In the heating dissipation treatment, the difference ratio between the maximum drain-source current density and drain-source current density at VG=15 of etching 1um and etching 3 um are 8.1% and 7.6%, respectively, at 300 K.
From the experiment results, the superior performance of Al2O3 gate dielectric metal-oxide-semiconductor HFETs (MOS-HEMT) can be effectively improve DC characteristics by USPD technique, and the substrate was etched deeper to correspond the better heating-dissipation ability.
| Identifer | oai:union.ndltd.org:TW/105FCU00428010 |
| Date | January 2017 |
| Creators | Chen, Yu-Chang, 陳昱璋 |
| Contributors | Lee, Ching-Sung, 李景松 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 84 |
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