碩士 / 國立高雄大學 / 電機工程學系碩博士班 / 105 / With the dimension of MOSFET gradually scaling down, 3D structure of Fin Field Effect Transistor (FinFET) is going to be developed as the evolution of traditional planar structure of FinFET. Comparing with planar structure, 3D FinFET is much better to control the drain current and reduce device’s off leakage current. Based on the continuous developing and modifying of former double gate and tri-gate structure, the multi-fin structure is proposed to increase driving capability. However, it is few study for characteristic of multi-fin FinFET especially for reliability inspection.
This paper is dedicated to research the P-type Fin Field Effect Transistor. After the device dimension scale down to nano level, the transverse electric field becomes larger. And enhanced field makes the impact of hot-carrier injection in the p-type device not ignorable no longer. We use reliability analysis of Hot Carrier Injection to observe the degradation situations and mechanisms.
According to the research of device basic analysis and reliability based on substrate-bias effect. It is found that there will be a better device performance at substrate forward bias because the device reduce the energy barrier between source and body, so that the carrier is more easily to move to the drain. However, a forward bias at the hot carrier injection during HCI makes the carrier easier to move to the drain and induce more serious impact ionization phenomenon, resulting in obvious degradation hot-carrier is induced device degradation.
It is found that the device structure with more fins provides better device performance due to increasing equivalent gate width even though the capability to control the gate is weaker than the structure with less fins. Furthermore, more fins existing in device structure shows better reliability under hot carrier injection (HCI) stress due to the existing of coupling effects among the neighboring fins with multi-fin structure.
| Identifer | oai:union.ndltd.org:TW/105NUK00442031 |
| Date | January 2017 |
| Creators | DAI, AN-NI, 戴安妮 |
| Contributors | YEH, WEN-KUAN, 葉文冠 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 83 |
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