碩士 / 逢甲大學 / 材料科學與工程學系 / 106 / Physical limits such as short channel effects (SCEs), degradation of carrier mobility and reduced power consumption began hindering the obedience of Moore’s Law while devices scaling. Therefore, the appearance of High-K Metal Gate and Fin Field Effect Transistors has overcome these problems. In recent years, the Internet of Things (IoT), Artificial Intelligence (AI), and Big Data have gradually developed. The low power devices are necessary when a large number of devices are integrated. Scientists amplify component voltages through the Negative Capacitance (NC) effect. This allows the transistor to activate the component at a lower operating voltage for the purpose of reducing power consumption.
In this study, the first part, we fabricated a ferroelectric capacitor structure of Metal-Ferroelectric-Metal. The ferroelectric characteristics of this capacitor were discussed. The second part combines the ferroelectric negative capacitance with fin field-effect transistors (FinFETs) to study and analyze the influence of the negative capacitance on the electrical properties of the transistor. Besides, we use gate voltage and pulse treatment to improve the hysteresis that must be associated with ferroelectric materials.
Negative capacitance (NC) through the ferroelectric effect amplifies the effective gate voltage, and transistors can thus be turned on with a smaller gate voltage applied, achieving low power consumption (S.S. < 60 mV/decade). Inevitable hysteresis in ferroelectric materials based NC FETs is however undesirable during FETs operation. In this study, HfZrO2 films act as the ferroelectric material. In order to improve our device performances, we apply different gate voltage and pulse, inducing dipole alignment in HfZrO2 films. Hysteresis curves are thus significantly reduced with ΔV approaching 0.03 V in our devices. We believe that this demonstration is insightful for the progress of ferroelectric NC transistors.
| Identifer | oai:union.ndltd.org:TW/106FCU00159008 |
| Date | January 2018 |
| Creators | FAN, MAN-TING, 范嫚婷 |
| Contributors | TSAY, CHIEN-YIE, 蔡健益 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 68 |
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