碩士 / 明新科技大學 / 電子工程系碩士班 / 106 / In today's nano-process era, component sizes are getting smaller and smaller, and electronic products are required to have high performance, low cost, and small size. In order to achieve the above requirements, it is imperative to find better components than the conventional two-dimensional MOSFETs. Here we find three-dimensional fin field-effect transistors (FinFETs). In deep nanometer applications, It is a very good component, but due to the large amount of manufacturing, many details need attention so as not to affect the performance and yield of IC products.
FinFETs have been widely used in advanced nano-processes, such as TSMC, Intel, and Samsung, which are the three most focused manufacturing companies in the world. These companies are using FinFET components for their maximum performance. In the semiconductor device manufacturing process, the FinFET has a relatively good control over the channel compared with the conventional transistor, which can effectively reduce the leakage current and improve the short-channel effect.
In our experimental measurement study, we used the p-type FinFET (pFinFET) as the main DUT. Use a fixed frontal (layout) channel width W=0.115μm, but the channel length L is different, including (0.12μm, 0.16μm, 0.24μm, 0.5μm, 2μm, 10μm) Make measurements. Observe Drain-induced barrier lowering (DIBL) and source/sink during measurements at different temperatures or at different source/drain extensions (LSDE) What are the different changes in the Punch-through effect? Measurements have revealed that for pFinFETs, the length of the components is reduced, DIBL is significantly increased, and the penetration effect is also significant. At increasing temperatures, the strong DIBL effect at LSDE = 60 nm was found to be 75oC rather than 125oC. In addition, at room temperature, the DIBL and penetration effects of LSDE=60nm and 160nm are compared. At LSDE=60nm, there is no orderly trend change when there is a regular LSDE=160nm, which may also be larger with LSDE=160nm. As a result, the resistance of the source/drain is more difficult to control evenly than to affect the two effects.
| Identifer | oai:union.ndltd.org:TW/106MHIT0686006 |
| Date | January 2018 |
| Creators | HUANG,WEN-YANG, 黃文敭 |
| Contributors | WANG,MU-CHUN, 王木俊 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 76 |
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