碩士 / 明新科技大學 / 電子工程系碩士班 / 106 / Insulated Gate Bipolar Transistor (IGBT), based on benefits of high input impedance and high current gain, is popular as a power discrete, which is applied to many varieties of applications. IGBT sustains comparably higher power because it uniquely controls high current at high applied voltage. Nevertheless, authors expect to explore the underlying electrical performances of IGBT without using curve tracer with high power measuring capability. IGBT devices with certain low power electrical properties by means of lower power tester are advisably applicable. Analysis of the measured ID-VG curves at lower powers and thus trans-conductance can help distinguish the appropriate process that definitely enhances the power discrete.
As for the deep submicron devices, the author measured electrical data on P-type PFinFET transistor sitting on the SOI (Silicon on silicon) wafer which are fitted with the conventional current-voltage formula that has been used for decades. By the formula, the fitting data can be simply substituted with the applied drain bias values and figured in the same way as the measured data. The authors start with VG=-0.25V and determine the threshold voltage, KP, and λ, in which KP and λ are used commonly at different gate voltage VG. All the other threshold voltages are then determined through both common values. The determined threshold voltages are fine-tuned so that the deviation of the fitting data and the measured data can reach minimum. At last, the measured curve at VG=0.0V must be fitted through a different mechanism, in which the VDS-proportional leakage current is to be taken into account.
| Identifer | oai:union.ndltd.org:TW/106MHIT0686010 |
| Date | January 2018 |
| Creators | LIAO, KUN-HUNG, 廖崑宏 |
| Contributors | YANG,HSIN-CHIA, 楊信佳 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 57 |
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