碩士 / 明新科技大學 / 電子工程系碩士班 / 106 / Abstract
Insulated Gate Bipolar Transistor (IGBT) is a popular power discrete device. The gate voltage of the MOSFET controls the high input impedance of the transistor, and it also uses the BJT's double-loaded sub-stream to achieve high current and low on-voltage control performances. By the way, IGBTs can also work with high reverse bias and is thus considered the prime power discrete. However, in order to understand the electrical performances of IGBT, some alternative measuring tool is used to do the job because high power curve tracer is not always available. In this study, devices of different device structures (including different gate widths and source widths) with different processes are fabricated and measured. The author analyzes the switching function to conclude the performances of the devices. The comparisons give the clues on the size design for the layout corresponding to the selected process conditions.
On the other hand, 3-D PFinFET devices are put to measurement. The traditional current-voltage characteristic formula is modified and the modified one is used to fit measured I-V curves. At higher VG, the leakage current is ignorable and the fitting curves can reasonably fit the I-V curves. But for VG = 0.0V, it becomes mandatory that the leakage term, which is proportional to the difference of Gate and Drain biases, should be taken into account to appropriately fit the curves.
| Identifer | oai:union.ndltd.org:TW/106MHIT0686014 |
| Date | January 2018 |
| Creators | CHANG, CHUN-YEN, 張駿彥 |
| Contributors | Hsin-Chia Yang, 楊信佳 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 80 |
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