碩士 / 明新科技大學 / 電子工程系碩士班 / 107 / Three dimensional FinFET(Fin Field Effect Transistor) devices are under high controllability at nano-meter scale because the leakage current is effectively suppressed through the fin-structural gates. Therefore, the devices are popular and feasible to the integration circuit design as the scale continues to shrink. In this paper, 90nm channel has been studied at various temperatures, in which higher temperatures correspond to more phonons and those phonons may directly scatter with the carriers. ID-VG curves demonstrate better trans-conductance at higher temperature while higher ID-VD characteristic curves are not substantially influenced.
In addition, radio-frequency integrated circuit using Agilent Design System (ADS) on Power Amplifier (PA) with central frequencies, such as 5.0GHz, is promoted to be applicable to wide-band ranges. Through the impedance matching, especially on S11 and S22, various inductances and capacitances are preset and the reflective coefficients are adjusted by tuning the circuit and then reduced to be as low as zero so that the available frequency ranges can be pinned down. As for the noise figures of the PA circuit, they are also proved to low enough to be advisable to integrated circuit designs.
| Identifer | oai:union.ndltd.org:TW/106MHIT0686018 |
| Date | January 2019 |
| Creators | TSENG,CHUN-KAI, 曾俊凱 |
| Contributors | YANG,HSIN-CHIA, 楊信佳 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 70 |
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